cystech electronics corp. spec. no. : c 886 k 3 issued date : 20 1 8 . 06 . 13 revised date : page no. : 1 / 10 mtbc7n10 k 3 cyste k product specification 10 0v n - channel enhancement mode mosfet mtbc7n10 k 3 features ? lower gate charge. ? esd protected gate. ? pb - free lead plating and halogen - free package . equivalent circuit outline ordering information device package shipping m tbc7n10 k3 - 0 - tb - g to - 92l ( pb - free lead plating and halogen - free package ) 2000 pcs / tape & box m t b c 7 n10 k3 - 0 - bm - g t o - 92l ( pb - free lead plating and halogen - free package ) 50 0 pcs / bag, 10 bags/box, 10 boxes/carton to - 92l mtbc7n10 k 3 g gate s sour c e d drain bv dss 100v i d @ t a =25 c, v gs =10v 1a r dson(typ) @ v gs =10v, i d =1a 389m r dson(typ) @ v gs =4.5v, i d =1a 413m r dson(typ) @ v gs =4v, i d =1a 407m environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, tb : 2000 pcs / tape & box ; bm : 500 pcs/bag, 10 bags/box, 10 boxes/carton product rank, zero for no rank products product name s d g
cystech electronics corp. spec. no. : c 886 k 3 issued date : 20 1 8 . 06 . 13 revised date : page no. : 2 / 10 mtbc7n10 k 3 cyste k product specification absolute maximum ratings (t c =25 ? c , unless otherwise noted ) parameter symbol limits unit drain - sour c e voltage v ds 10 0 v gate - source voltage v gs 20 continuous drain current t a =25 c, v gs =10v i d 1 a t a =70 c, v gs =10v 0.8 pulsed drain current i dm 4 (note 1 & 2) power d issipation t a =25 c p d 1 w t a =70 c 0. 6 4 operating junction and storage temperature tj , tstg - 55 ~ +1 50 ? c thermal data parameter symbol value unit thermal resistance, junction - to - ambient, max r ja 1 25 ? c /w note :1. pulse width limited by maximum junction temperature. 2. duty cycle 1%. electrical characteristics (t a =25 ? c , unless otherwise specified ) symbol min. typ. max. unit te st conditions static bv dss 10 0 - - v v gs =0v, i d = 25 0 a bv dss / tj - 107 - mv/ c i d =1ma, referenced to 25 c v gs(th) 1 - 2.5 v v ds =10v, i d =1ma v gs(th) / tj - - 3 - mv/ c i d =1ma, referenced to 25 c i gss - - 1 0 a v gs = 1 6 v , v ds =0v i dss - - 1 v ds = 8 0v, v gs =0v - - 10 v ds =80v, v gs =0v, tj=125 ? c * r ds(on) 1 - 389 520 m ? i d = 1 a , v gs =10v - 407 560 i d = 1 a , v gs =4 .5 v - 413 580 i d = 1 a , v gs =4v * g fs 1 1 2.4 - s i d = 1 a , v gs =10v dynamic ciss - 103 1 5 0 pf v ds =25v, v gs =0v, f=1mhz coss - 18 27 crss - 17 24 * t d(on) 1 2 - 3.6 7.2 ns v d s = 50 v, i d = 0.5 a,v g s = 10 v, r g = 10 * t r 1 2 - 16 24 * t d(off) 1 2 - 17.2 26 * t f 1 2 - 18.8 28
cystech electronics corp. spec. no. : c 886 k 3 issued date : 20 1 8 . 06 . 13 revised date : page no. : 3 / 10 mtbc7n10 k 3 cyste k product specification * qg 1 2 - 1.6 3.2 nc v ds = 50 v, i d = 1 a, v gs =5v * qgs 1 2 - 0.8 1. 6 * qgd 1 2 - 0.5 1.5 rg - 18 - ? f=1mhz sour ce - drain diode i s - - 0.8 a v sd 1 - 0.8 1.2 v i s =1a, v gs =0v 1 pulse test : pulse width 300 s , duty cycle 2% 2 independent of operating temperatur e 3 pulse width limited by maximum junction temperature
cystech electronics corp. spec. no. : c 886 k 3 issued date : 20 1 8 . 06 . 13 revised date : page no. : 4 / 10 mtbc7n10 k 3 cyste k product specification typical characteristics typical output characteristics 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 v ds , drain-source voltage(v) i d , drain current(a) 10v 9v 8v 7v 6v 5v 4v 3v v gs =2v typical output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 6 7 8 9 10 v ds , drain-source voltage(v) i d , drain current(a) 10v,9v,8v,7v,6v,5v,4v,3v v gs =2v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss (v), normalized drain-source breakdown voltage i d =250 a, v gs =0v typical transfer characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v static drain-source on-state resistance vs drain current 100 1000 0.001 0.01 0.1 1 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) top : v gs =2v 3v 4v 4.5v bottom 10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 1 2 3 4 5 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v
cystech electronics corp. spec. no. : c 886 k 3 issued date : 20 1 8 . 06 . 13 revised date : page no. : 5 / 10 mtbc7n10 k 3 cyste k product specification typical characteristics(cont.) static drain-source on-state resistance vs gate-source voltage 0 200 400 600 800 1000 0 2 4 6 8 10 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =1a drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =1a r ds(on) @tj=25c : 390m capacitance vs drain-to-source voltage 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed t a =25c gate charge characteristics 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =50v i d =1a t a =25c
cystech electronics corp. spec. no. : c 886 k 3 issued date : 20 1 8 . 06 . 13 revised date : page no. : 6 / 10 mtbc7n10 k 3 cyste k product specification typical characteristics(cont.) maximum safe operating area 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c, v gs =10v, r ja =125c/w single pulse r ds(on) limited maximum drain current vs junctiontemperature 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 0 50 100 150 200 t a , ambient temperature() p d , power dissipation(w) single pulse maximum power dissipation 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 pulse width(s) peak transient power (w) t j(max) =150c t a =25c r ja =125c/w
cystech electronics corp. spec. no. : c 886 k 3 issued date : 20 1 8 . 06 . 13 revised date : page no. : 7 / 10 mtbc7n10 k 3 cyste k product specification typical characteristics(cont.) transient thermal response curves 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *z jc (t) 4.r ja =125 c/w
cystech electronics corp. spec. no. : c 886 k 3 issued date : 20 1 8 . 06 . 13 revised date : page no. : 8 / 10 mtbc7n10 k 3 cyste k product specification to - 92l taping outline dim item mill imeters min. max. a1 component body width 4.70 5.10 a component body height 7.80 8.20 t component body thickness 3. 7 0 4. 1 0 d lead wire d iameter 0. 35 0.5 5 d1 lead wire d iameter 1 0.60 0.80 p pitch of component 1 2.40 13.0 0 p0 feed hole pitch 12.50 12.90 p2 hole center to component center 6.05 6.65 f1, f2 lead to lead distance 2.20 2.80 h component alignment, f - r - 1.00 1.00 w tape width 17.50 19.00 w0 hole down tape width 5.50 6.50 w1 hole position 8.50 9.50 w2 hole down tape position - 1.00 h height of component from tape center 19.00 21.00 h0 lead wire clinch height 15.50 16.50 l1 lead wire (tape portion) 2.50 - d0 feed hole diameter 3.80 4.20 t1 taped lead thickness 0.35 0.45 t2 carrier tape thickness 0.15 0.25 p 1 position of hole 3.55 4.15 p component alignment - 1.00 1.00
cystech electronics corp. spec. no. : c 886 k 3 issued date : 20 1 8 . 06 . 13 revised date : page no. : 9 / 10 mtbc7n10 k 3 cyste k product specification recommended wave soldering condition product peak temperature soldering time pb - free devices 260 +0/ - 5 ? c 5 +1/ - 1 seconds recom mended temperature profile for ir reflow profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (tsmax to tp) 3 ? c/second max. 3 ? c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60 - 120 seconds 150 ? c 200 ? c 60 - 180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60 - 150 seconds 217 ? c 60 - 150 seconds peak temperature(t p ) 240 +0/ - 5 ? c 260 +0/ - 5 ? c time within 5 ? c of actual peak temperature(tp) 10 - 30 seconds 20 - 40 seconds ramp down rate 6 ? c/second max. 6 ? c/second max. time 25 ? c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of th e package, measured on the package body surface.
cystech electronics corp. spec. no. : c 886 k 3 issued date : 20 1 8 . 06 . 13 revised date : page no. : 10 / 10 mtbc7n10 k 3 cyste k product specification to - 92 l dimension *: typical dim inches millimeters dim inches millimeters min. max. min. max. min. max. min. max. a 0.1 46 0.1 61 3.700 4. 100 e 0. 307 0. 323 7.800 8.200 a1 0. 050 0. 062 1.280 1.580 e * 0. 05 *1.270 b 0. 014 0.022 0.350 0.550 e1 0.096 0.104 2.440 2.640 b1 0.0 2 4 0.0 31 0. 600 0. 800 l 0.543 0.559 13.800 14.200 c 0.014 0.018 0.350 0.450 ? - 0.063 - 1.600 d 0.1 85 0. 201 4.700 5.100 h 0.000 0.012 0.00 0 0.300 d1 0.157 - 4.000 - notes: 1. controlling dimension: millimeters. 2 . maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specificat ion or packing method, please contact your local cyste k sales office. material: ? ? mold compound: epoxy resin family, flammability solid burning class: ul94v - 0 . important notice: ? ? ? semiconductor products are not warranted to be suitable for use in life - support applications, or syst ems. ? b c7 n10 marking: style: pin 1. s ource 2. d rain 3. g ate 3 - lead to - 92 l plastic package cystek package code: k3 product name date code: year+month +lot no. year: 7 20 1 7, 8 20 1 8 , etc. month: a 1, b 2, c 3, d 4 , e 5 , f 6 , g 7 , h 8 , j 9, k 10, l 11, m 12 lot no. : serial number : 01~99 1 2 3
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